TCAD based investigation of single event transient effect in double channel AlGaN/GaN HEMT
S Das, V Kumari, K Sehra, M Gupta, M Saxena
IEEE Transactions on Device and Materials Reliability 21 (3), 416-423
2021
Cited by 23
Publications
Shreyasi Das • Electrical Engineering, Indian Institute of Technology Bombay
Verified email at iitb.ac.in
On the double channel engineering of dual gate AlGaN/GaN HEMTs for heavy ion sensing applications
S Das, V Kumari, K Sehra, M Gupta, M Saxena
Micro and Nanostructures 182, 207653
2023
Cited by 5
Modeling and analysis of lung water content using rf sensor
P Ganguly, S Das, A Chakrabarti, JY Siddiqui
IEEE Open Journal of Instrumentation and Measurement 3, 1-8
2024
Cited by 4
Gate Leakage Current Assessment of AlGaN/GaN HEMT with AlN Cap Layer
S Das, V Kumari, M Gupta, M Saxena
International Conference on Computers and Devices for Communication, 459-464
2019
Cited by 3
Comparative investigation of single and double channel AlGaN/GaN HEMTs for LNAs
S Das, K Sehra, V Kumari, M Gupta, M Saxena
International Workshop on the Physics of Semiconductor and Devices, 127-140
2021
Cited by 1
Predictive Modeling of Lung Water Content with Machine Learning and RF Sensor
P Ganguly, S Das, A Chakrabarti, JY Siddiqui
2024 IEEE Conference on Antenna Measurements and Applications (CAMA), 1-5
2024